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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT4403LT1/D Switching Transistor PNP Silicon 1 BASE COLLECTOR 3 MMBT4403LT1 Motorola Preferred Device MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Symbol VCEO VCBO VEBO IC Value -40 -40 -5.0 -600 2 EMITTER 1 3 Unit Vdc Vdc Vdc mAdc 2 CASE 318 - 08, STYLE 6 SOT- 23 (TO - 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 - 55 to +150 Unit mW mW/C C/W mW mW/C C/W C DEVICE MARKING MMBT4403LT1 = 2T ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(3) (IC = -1.0 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = -0.1 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = -0.1 mAdc, IC = 0) Base Cutoff Current (VCE = -35 Vdc, VEB = -0.4 Vdc) Collector Cutoff Current (VCE = -35 Vdc, VEB = -0.4 Vdc) 1. FR- 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO -40 V(BR)CBO -40 V(BR)EBO -5.0 IBEV -- ICEX -- -0.1 -0.1 Adc -- Adc -- Vdc -- Vdc Vdc v v Thermal Clad is a trademark of the Bergquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1996 1 MMBT4403LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -150 mAdc, VCE = -2.0 Vdc)(3) (IC = -500 mAdc, VCE = -2.0 Vdc)(3) Collector - Emitter Saturation Voltage(3) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) Base - Emitter Saturation Voltage (3) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) hFE 30 60 100 100 20 VCE(sat) -- -- VBE(sat) -0.75 -- -0.95 -1.3 -0.4 -0.75 Vdc -- -- -- 300 -- Vdc -- SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = -20 mAdc, VCE = -10 Vdc, f = 100 MHz) Collector-Base Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Emitter-Base Capacitance (VBE = -0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) Small - Signal Current Gain (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) Output Admittance (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) fT 200 Ccb -- Ceb -- hie 1.5 hre 0.1 hfe 60 hoe 1.0 100 500 8.0 -- 15 X 10- 4 30 k 8.5 pF -- pF MHz mmhos SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width (VCC = -30 Vdc, VEB = -2.0 Vdc, IC = -150 mAdc, IB1 = -15 mAdc) (VCC = -30 Vdc, IC = -150 mAdc, IB1 = IB2 = -15 mAdc) td tr ts tf -- -- -- -- 15 ns 20 225 ns 30 v 300 ms, Duty Cycle v 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUIT - 30 V < 2 ns +2 V 0 1.0 k - 16 V 10 to 100 s, DUTY CYCLE = 2% CS* < 10 pF 200 +14 V 0 1.0 k -16 V CS* < 10 pF < 20 ns - 30 V 200 1.0 to 100 s, DUTY CYCLE = 2% + 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn-On Time Figure 2. Turn-Off Time 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data MMBT4403LT1 TRANSIENT CHARACTERISTICS 25C 30 20 CAPACITANCE (pF) 100C 10 7.0 5.0 Ceb 3.0 Q, CHARGE (nC) 2.0 1.0 0.7 0.5 0.3 0.2 2.0 0.1 0.1 0.2 0.3 2.0 3.0 5.0 7.0 10 0.5 0.7 1.0 REVERSE VOLTAGE (VOLTS) 20 30 10 20 200 30 50 70 100 IC, COLLECTOR CURRENT (mA) 300 500 10 7.0 5.0 Ccb VCC = 30 V IC/IB = 10 QT QA Figure 3. Capacitances Figure 4. Charge Data 100 70 50 t r , RISE TIME (ns) t, TIME (ns) 30 20 tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 IC/IB = 10 100 70 50 30 20 VCC = 30 V IC/IB = 10 10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) 10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) Figure 5. Turn-On Time Figure 6. Rise Time 200 IC/IB = 10 t s, STORAGE TIME (ns) 100 70 50 IB1 = IB2 ts = ts - 1/8 tf 30 20 IC/IB = 20 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 MMBT4403LT1 SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VCE = -10 Vdc, TA = 25C Bandwidth = 1.0 Hz 10 10 f = 1 kHz 8 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 430 IC = 500 A, RS = 560 IC = 50 A, RS = 2.7 k IC = 100 A, RS = 1.6 k NF, NOISE FIGURE (dB) 8 6 6 4 4 IC = 50 A 100 A 500 A 1.0 mA 2 RS = OPTIMUM SOURCE RESISTANCE 2 0 0.01 0.02 0.05 0.1 0.2 0 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1k 2k 5k 10 k 20 k 50 k RS, SOURCE RESISTANCE (OHMS) f, FREQUENCY (kHz) Figure 8. Frequency Effects Figure 9. Source Resistance Effects h PARAMETERS VCE = -10 Vdc, f = 1.0 kHz, TA = 25C selected from the MMBT4403LT1 lines, and the same units This group of graphs illustrates the relationship between were used to develop the correspondingly-numbered curves hfe and other "h" parameters for this series of transistors. To on each graph. obtain these curves, a high-gain and a low-gain unit were 1000 700 500 hfe , CURRENT GAIN 300 200 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 hie , INPUT IMPEDANCE (OHMS) 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 100 70 50 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 10. Current Gain 20 h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) 10 5.0 2.0 1.0 0.5 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 hoe, OUTPUT ADMITTANCE (m mhos) 500 Figure 11. Input Impedance 100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 12. Voltage Feedback Ratio 4 Figure 13. Output Admittance Motorola Small-Signal Transistors, FETs and Diodes Device Data MMBT4403LT1 STATIC CHARACTERISTICS 3.0 h FE, NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125C 25C 1.0 0.7 0.5 0.3 0.2 0.1 - 55C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 Figure 14. DC Current Gain VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 0.8 0.6 IC = 1.0 mA 0.4 10 mA 100 mA 500 mA 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 Figure 15. Collector Saturation Region 1.0 0.8 VOLTAGE (VOLTS) TJ = 25C VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ C) 0.5 0 0.5 1.0 1.5 2.0 VCE(sat) @ IC/IB = 10 2.5 0.1 0.2 qVC for VCE(sat) 0.6 VBE(sat) @ VCE = 10 V 0.4 0.2 qVS for VBE 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 0 0.1 0.2 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 Figure 16. "On" Voltages Figure 17. Temperature Coefficients Motorola Small-Signal Transistors, FETs and Diodes Device Data 5 MMBT4403LT1 INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT-23 SOT-23 POWER DISSIPATION The power dissipation of the SOT-23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT-23 package, PD can be calculated as follows: PD = TJ(max) - TA RJA SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150C - 25C 556C/W = 225 milliwatts The 556C/W for the SOT-23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. 6 Motorola Small-Signal Transistors, FETs and Diodes Device Data MMBT4403LT1 PACKAGE DIMENSIONS A L 3 BS 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 V G C D H K J DIM A B C D G H J K L S V CASE 318-08 SOT-23 (TO-236AB) ISSUE AE STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR Motorola Small-Signal Transistors, FETs and Diodes Device Data 7 MMBT4403LT1 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 8 Motorola Small-Signal Transistors, FETs and Diodes Device Data MMBT4403LT1/D *MMBT4403LT1/D* |
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